Kingston Memory KVR16S11S6/2 2GB DDR3 1600 SODIMM Retail
MPN
KVR16S11S6/2
1.JEDEC standard 1.5V (1.425V -1.575V) Power Supply
2.VDDQ equal 1.5V (1.425V - 1.575V)
3.800MHz fCK for 1600Mb/sec/pin
4.8 independent internal bank
5.Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
6.Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
7.8-bit pre-fetch
8.Bi-directional Differential Data Strobe
9.Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm +/- 1%)
10.On Die Termination using ODT pin
11.Asynchronous Reset
12.PCB : Height 1.180 (30.00mm), single sided component
CL(IDD)
11 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin)
35ns (min.)
Maximum Operating Power
1.170 W
UL Rating
94 V - 0
KVR16S11S6/2
1.JEDEC standard 1.5V (1.425V -1.575V) Power Supply
2.VDDQ equal 1.5V (1.425V - 1.575V)
3.800MHz fCK for 1600Mb/sec/pin
4.8 independent internal bank
5.Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
6.Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
7.8-bit pre-fetch
8.Bi-directional Differential Data Strobe
9.Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm +/- 1%)
10.On Die Termination using ODT pin
11.Asynchronous Reset
12.PCB : Height 1.180 (30.00mm), single sided component
CL(IDD)
11 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin)
35ns (min.)
Maximum Operating Power
1.170 W
UL Rating
94 V - 0
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Free return shipping within the US. Find out more.